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savantic semiconductor product specification silicon npn power transistors 2SD1243 d escription with to-3pn package wide area of safe operation applications audio frequency power amplifier high frequency power amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1243 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 60 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 1.5 v v besat base-emitter saturation voltage i c =5a ;i b =0.5a 2.0 v i cbo collector cut-off current v cb =60v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe dc current gain i c =3a ; v ce =3v 50
savantic semiconductor product specification 3 silicon npn power transistors 2SD1243 package outline fig.2 outline dimensions

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